Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles

Yanfeng Jiang; Bing Yang; Xiaobo Zhang; Jiaxin Ju

doi:10.1109/INEC.2008.4585583

Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles

Yanfeng Jiang, Bing Yang, Xiaobo Zhang, Jiaxin Ju

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Abstract

It has been proved by experimental results that the ohmic contact property of silicon carbide can be improved by using some specific nanometer metal particles. In this paper, authors have constructed a quantum tunneling models to explain the experimental results. The influences of parameters on the ohmic contact characteristics have been calculated based on the models. The values show that the tunneling effect can be observed by adding nanometer particles. The tunneling probability has been increased. Moreover, with the existence of nanometer particles, pinning of Fermi level has been conquered. So, it is an effective method by using specific nanometer metal particles to improve the characteristic of P-type silicon carbide ohmic contact.

Original language	English (US)
Title of host publication	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages	708-710
Number of pages	3
DOIs	https://doi.org/10.1109/INEC.2008.4585583
State	Published - Oct 1 2008
Event	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China Duration: Mar 24 2008 → Mar 27 2008

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Name	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Other

Other	2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Country/Territory	China
City	Shanghai
Period	3/24/08 → 3/27/08

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10.1109/INEC.2008.4585583

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Jiang, Y., Yang, B., Zhang, X., & Ju, J. (2008). Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles. In 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 (pp. 708-710). Article 4585583 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008). https://doi.org/10.1109/INEC.2008.4585583

Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles. / Jiang, Yanfeng; Yang, Bing; Zhang, Xiaobo et al.
2008 2nd IEEE International Nanoelectronics Conference, INEC 2008. 2008. p. 708-710 4585583 (2008 2nd IEEE International Nanoelectronics Conference, INEC 2008).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Jiang, Y, Yang, B, Zhang, X & Ju, J 2008, Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles. in 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008., 4585583, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, pp. 708-710, 2008 2nd IEEE International Nanoelectronics Conference, INEC 2008, Shanghai, China, 3/24/08. https://doi.org/10.1109/INEC.2008.4585583

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AB - It has been proved by experimental results that the ohmic contact property of silicon carbide can be improved by using some specific nanometer metal particles. In this paper, authors have constructed a quantum tunneling models to explain the experimental results. The influences of parameters on the ohmic contact characteristics have been calculated based on the models. The values show that the tunneling effect can be observed by adding nanometer particles. The tunneling probability has been increased. Moreover, with the existence of nanometer particles, pinning of Fermi level has been conquered. So, it is an effective method by using specific nanometer metal particles to improve the characteristic of P-type silicon carbide ohmic contact.

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Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles

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