Research of mechanism on the improvement of silicon carbide ohmic contact property influenced by nanometer metal particles

Yanfeng Jiang, Bing Yang, Xiaobo Zhang, Jiaxin Ju

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

It has been proved by experimental results that the ohmic contact property of silicon carbide can be improved by using some specific nanometer metal particles. In this paper, authors have constructed a quantum tunneling models to explain the experimental results. The influences of parameters on the ohmic contact characteristics have been calculated based on the models. The values show that the tunneling effect can be observed by adding nanometer particles. The tunneling probability has been increased. Moreover, with the existence of nanometer particles, pinning of Fermi level has been conquered. So, it is an effective method by using specific nanometer metal particles to improve the characteristic of P-type silicon carbide ohmic contact.

Original languageEnglish (US)
Title of host publication2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
Pages708-710
Number of pages3
DOIs
StatePublished - Oct 1 2008
Event2008 2nd IEEE International Nanoelectronics Conference, INEC 2008 - Shanghai, China
Duration: Mar 24 2008Mar 27 2008

Publication series

Name2008 2nd IEEE International Nanoelectronics Conference, INEC 2008

Other

Other2008 2nd IEEE International Nanoelectronics Conference, INEC 2008
CountryChina
CityShanghai
Period3/24/083/27/08

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