Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

S. Ray; P. Ruden; V. Sokolov; R. Kolbas; T. Boonstra; J. Williams

doi:10.1063/1.96849

Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

S. Ray, P. Ruden, V. Sokolov, R. Kolbas, T. Boonstra, J. Williams

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.

Original language	English (US)
Pages (from-to)	1666-1668
Number of pages	3
Journal	Applied Physics Letters
Volume	48
Issue number	24
DOIs	https://doi.org/10.1063/1.96849
State	Published - Dec 1 1986

Access

10.1063/1.96849

Fingerprint Dive into the research topics of 'Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition'. Together they form a unique fingerprint.

Cite this

@article{13fc1813c24c4a5abee1d8f5fe760479,

title = "Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition",

abstract = "Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.",

author = "S. Ray and P. Ruden and V. Sokolov and R. Kolbas and T. Boonstra and J. Williams",

year = "1986",

month = dec,

day = "1",

doi = "10.1063/1.96849",

language = "English (US)",

volume = "48",

pages = "1666--1668",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "24",

}

TY - JOUR

T1 - Resonant tunneling transport at 300 K in GaAs-AlGaAs quantum wells grown by metalorganic chemical vapor deposition

AU - Ray, S.

AU - Ruden, P.

AU - Sokolov, V.

AU - Kolbas, R.

AU - Boonstra, T.

AU - Williams, J.

PY - 1986/12/1

Y1 - 1986/12/1

N2 - Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.

AB - Resonant tunneling transport was studied in GaAs-AlGaAs single well, double barrier structures. Negative differential resistance at 77 and 300 K was observed in devices grown by metalorganic chemical vapor deposition. The observed peak to valley ratios were 6 to 1 and 1.48 to 1, respectively. The presence of GaAs spacer layers was found to have a distinct effect on the 300 K current versus voltage characteristics. Microwave oscillation at frequencies up to 3.0 GHz was observed at 300 K. A short discussion of the oscillation frequency limits of our structure is presented.

UR - http://www.scopus.com/inward/record.url?scp=0005874668&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0005874668&partnerID=8YFLogxK

U2 - 10.1063/1.96849

DO - 10.1063/1.96849

M3 - Article

AN - SCOPUS:0005874668

VL - 48

SP - 1666

EP - 1668

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 24

ER -