TY - JOUR
T1 - Room-temperature atmospheric oxidation of Si nanocrystals after HF etching
AU - Pi, X. D.
AU - Mangolini, L.
AU - Campbell, S. A.
AU - Kortshagen, U.
PY - 2007/2/13
Y1 - 2007/2/13
N2 - The effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic resonance spectroscopy. After the HF etching, the surface of Si-NCs is found to be H terminated. The HF etching also restructures the surface of Si-NCs. This leads to a decrease in the incorporation of O during subsequent oxidation, which finally results in silicon suboxide Si O1.9. In contrast, without the HF etching stoichiometric Si O2 is formed. A smaller ratio of O to Si in the silicon oxide results in a higher density of defects. This contributes to a more significant oxidation-induced decrease in the intensity of photoluminescence from Si-NCs after the HF etching than without the HF etching.
AB - The effect of HF etching of the silicon oxide shell covering the surface of Si nanocrystals (NCs) on the subsequent room-temperature atmospheric oxidation of Si-NCs has been investigated by means of photoluminescence measurements, Fourier transform infrared spectroscopy, and electron paramagnetic resonance spectroscopy. After the HF etching, the surface of Si-NCs is found to be H terminated. The HF etching also restructures the surface of Si-NCs. This leads to a decrease in the incorporation of O during subsequent oxidation, which finally results in silicon suboxide Si O1.9. In contrast, without the HF etching stoichiometric Si O2 is formed. A smaller ratio of O to Si in the silicon oxide results in a higher density of defects. This contributes to a more significant oxidation-induced decrease in the intensity of photoluminescence from Si-NCs after the HF etching than without the HF etching.
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U2 - 10.1103/PhysRevB.75.085423
DO - 10.1103/PhysRevB.75.085423
M3 - Article
AN - SCOPUS:33846991565
SN - 1098-0121
VL - 75
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 8
M1 - 085423
ER -