Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model

Jongyeon Kim, Hui Zhao, Yanfeng Jiang, Angeline Klemm, Jian Ping Wang, Chris H. Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

10 Scopus citations


Spin transfer torque magnetoresistive random access memory (STT-MRAM) technology has been gaining interest as an alternative to SRAM as it possesses unique properties such as nonvolatility, higher density, and good scalability. Magnetic tunnel junctions (MTJs) based on shape anisotropy, interface anisotropy and crystal anisotropy have been demonstrated with the common goal of reducing the switching current while maintaining sufficient nonvolatility. However, the research community has yet to reach a strong consensus on which MTJ technology will prevail in deeply scaled technology nodes such as 8nm. To answer this open ended question, this paper presents a comprehensive study on the scalability of STT-MRAM based on various MTJ technologies: namely, in-plane MTJ (IMTJ), crystal perpendicular MTJ (c-PMTJ), and interface perpendicular MTJ (i-PMTJ). For a practical analysis, our simulation model captures key physics of STT switching in various MTJs by incorporating dimension-dependent effective anisotropy field (HKeff) into the Landau-Lifshitz-Gilbert (LLG) equation and considering realistic material parameters.

Original languageEnglish (US)
Title of host publication72nd Device Research Conference, DRC 2014 - Conference Digest
PublisherInstitute of Electrical and Electronics Engineers Inc.
Number of pages2
ISBN (Print)9781479954056
StatePublished - Jan 1 2014
Event72nd Device Research Conference, DRC 2014 - Santa Barbara, CA, United States
Duration: Jun 22 2014Jun 25 2014

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770


Other72nd Device Research Conference, DRC 2014
Country/TerritoryUnited States
CitySanta Barbara, CA


Dive into the research topics of 'Scaling analysis of in-plane and perpendicular anisotropy magnetic tunnel junctions using a physics-based model'. Together they form a unique fingerprint.

Cite this