Scanning-helium-ion-beam lithography with hydrogen silsesquioxane resist

D. Winston, B. M. Cord, B. Ming, D. C. Bell, W. F. Dinatale, L. A. Stern, A. E. Vladar, M. T. Postek, M. K. Mondol, J. K.W. Yang, K. K. Berggren

Research output: Contribution to journalArticlepeer-review

82 Scopus citations

Abstract

A scanning-helium-ion-beam microscope is now commercially available. This microscope can be used to perform lithography similar to, but of potentially higher resolution than, scanning electron-beam lithography. This article describes the control of this microscope for lithography via beam steering/blanking electronics and evaluates the high-resolution performance of scanning helium-ion-beam lithography. The authors found that sub- 10 nm -half-pitch patterning is feasible. They also measured a point-spread function that indicates a reduction in the micrometer-range proximity effect typical in electron-beam lithography.

Original languageEnglish (US)
Pages (from-to)2702-2706
Number of pages5
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume27
Issue number6
DOIs
StatePublished - 2009

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