TY - JOUR
T1 - Schottky diode via dielectrophoretic assembly of reduced graphene oxide sheets between dissimilar metal contacts
AU - Islam, Muhammad R.
AU - Joung, Daeha
AU - Khondaker, Saiful I.
PY - 2011/3
Y1 - 2011/3
N2 - We demonstrate the fabrication of reduced graphene oxide (RGO) Schottky diodes via dielectrophoretic (DEP) assembly of RGO between two dissimilar metal contacts. Titanium (Ti) was used to make a Schottky contact, while palladium (Pd) was used to make an Ohmic contact. From the current-voltage characteristics, we obtain rectifying behavior with a rectification ratio of up to 600. The ideality factor was high (4.9), possibly due to the presence of a large number of defects in the RGO sheets. The forward biased turn-on voltage was 1V, whereas the reverse biased breakdown voltage was 3.1 V, which improved further upon mild annealing at 200°C and can be attributed to an increase in the work function of RGO due to annealing.
AB - We demonstrate the fabrication of reduced graphene oxide (RGO) Schottky diodes via dielectrophoretic (DEP) assembly of RGO between two dissimilar metal contacts. Titanium (Ti) was used to make a Schottky contact, while palladium (Pd) was used to make an Ohmic contact. From the current-voltage characteristics, we obtain rectifying behavior with a rectification ratio of up to 600. The ideality factor was high (4.9), possibly due to the presence of a large number of defects in the RGO sheets. The forward biased turn-on voltage was 1V, whereas the reverse biased breakdown voltage was 3.1 V, which improved further upon mild annealing at 200°C and can be attributed to an increase in the work function of RGO due to annealing.
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U2 - 10.1088/1367-2630/13/3/035021
DO - 10.1088/1367-2630/13/3/035021
M3 - Article
AN - SCOPUS:79953791589
SN - 1367-2630
VL - 13
JO - New Journal of Physics
JF - New Journal of Physics
M1 - 035021
ER -