Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist

Toshiyuki Mitsui; Rob Curtis; Eric Ganz

doi:10.1063/1.370946

Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist

Toshiyuki Mitsui, Rob Curtis, Eric Ganz

Physics and Astronomy (Twin Cities)

Research output: Contribution to journal › Article › peer-review

19 Scopus citations

Abstract

Nanoscale Ti was grown on monohydride and bare Si(001) surface using TiCl₄ as chemical vapor deposition precursor and an atomic hydrogen resist. TiCl₄ showed no reaction with the monohydride resist layer, implying that Si monohydride surface is not as reactive as the di- or higher hydride phases. Repeatedly dosing the Si surface with TiCl₄ and removing excess chlorine overcame the passivation of the Si surface and Ti clusters.

Original language	English (US)
Pages (from-to)	1676-1679
Number of pages	4
Journal	Journal of Applied Physics
Volume	86
Issue number	3
DOIs	https://doi.org/10.1063/1.370946
State	Published - Aug 1999

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abstract = "Nanoscale Ti was grown on monohydride and bare Si(001) surface using TiCl4 as chemical vapor deposition precursor and an atomic hydrogen resist. TiCl4 showed no reaction with the monohydride resist layer, implying that Si monohydride surface is not as reactive as the di- or higher hydride phases. Repeatedly dosing the Si surface with TiCl4 and removing excess chlorine overcame the passivation of the Si surface and Ti clusters.",

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AU - Curtis, Rob

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AB - Nanoscale Ti was grown on monohydride and bare Si(001) surface using TiCl4 as chemical vapor deposition precursor and an atomic hydrogen resist. TiCl4 showed no reaction with the monohydride resist layer, implying that Si monohydride surface is not as reactive as the di- or higher hydride phases. Repeatedly dosing the Si surface with TiCl4 and removing excess chlorine overcame the passivation of the Si surface and Ti clusters.

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Selective nanoscale growth of titanium on the Si(001) surface using an atomic hydrogen resist

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