Semiconductors with hetero-n-i-p-i superlattices

P. Ruden, G. H. Döhler

Research output: Contribution to journalArticlepeer-review

4 Scopus citations

Abstract

We propose a new type of artificial one-dimensional semiconductor superlatttice which combines the high charge carrier mobilities characteristic for modulation doped hetero-structure superlattices with the tunability of charge carrier concentration and subband structure of n-i-p-i doping superlattices. This type of system, e.g., allows for the investigation of the mobility of the charge carriers confined to the undoped layers as a function of their variable density.

Original languageEnglish (US)
Pages (from-to)540-542
Number of pages3
JournalSurface Science
Volume132
Issue number1-3
DOIs
StatePublished - Sep 2 1983

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