Sericin for resistance switching device with multilevel nonvolatile memory

Hong Wang; Fanben Meng; Yurong Cai; Liyan Zheng; Yuangang Li; Yuanjun Liu; Yueyue Jiang; Xiaotian Wang; Xiaodong Chen

doi:10.1002/adma.201301983

Sericin for resistance switching device with multilevel nonvolatile memory

Hong Wang, Fanben Meng, Yurong Cai, Liyan Zheng, Yuangang Li, Yuanjun Liu, Yueyue Jiang, Xiaotian Wang, Xiaodong Chen

Mechanical Engineering

Research output: Contribution to journal › Article › peer-review

215 Scopus citations

Abstract

Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 10⁶ have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

Original language	English (US)
Pages (from-to)	5498-5503
Number of pages	6
Journal	Advanced Materials
Volume	25
Issue number	38
DOIs	https://doi.org/10.1002/adma.201301983
State	Published - Oct 11 2013

Keywords

electronic device
multilevel memory
protein
resistance switching
sericin

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title = "Sericin for resistance switching device with multilevel nonvolatile memory",

abstract = "Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.",

keywords = "electronic device, multilevel memory, protein, resistance switching, sericin",

author = "Hong Wang and Fanben Meng and Yurong Cai and Liyan Zheng and Yuangang Li and Yuanjun Liu and Yueyue Jiang and Xiaotian Wang and Xiaodong Chen",

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language = "English (US)",

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journal = "Advanced Materials",

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T1 - Sericin for resistance switching device with multilevel nonvolatile memory

AU - Wang, Hong

AU - Meng, Fanben

AU - Cai, Yurong

AU - Zheng, Liyan

AU - Li, Yuangang

AU - Liu, Yuanjun

AU - Jiang, Yueyue

AU - Wang, Xiaotian

AU - Chen, Xiaodong

PY - 2013/10/11

Y1 - 2013/10/11

N2 - Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

AB - Resistance switching characteristics of natural sericin protein film is demonstrated for nonvolatile memory application for the first time. Excellent memory characteristics with a resistance OFF/ON ratio larger than 106 have been obtained and a multilevel memory based on sericin has been achieved. The environmentally friendly high performance biomaterial based memory devices may hold a place in the future of electronic device development.

KW - electronic device

KW - multilevel memory

KW - protein

KW - resistance switching

KW - sericin

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VL - 25

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JO - Advanced Materials

JF - Advanced Materials

IS - 38

ER -

Sericin for resistance switching device with multilevel nonvolatile memory

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