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Traditional one-step annealing of ultrathin amorphous Y–Fe–O films on Si has been reported to yield ‘incomplete crystallization’. Here, it is shown that films produced by standard anneals (e.g.: 800°C, 3 min) actually contain yttrium iron garnet (YIG) crystallites in a nanocrystalline non-garnet matrix. During in situ TEM laser annealing, a low-temperature pre-anneal enabled subsequent YIG crystallization at velocities of 280 nm/s that prevented the formation of the nanocrystalline matrix. From these results, a two-step rapid thermal anneal was identified (400°C, 3 min; 800°C, 3 min) that successfully produces phase-pure garnet films on SiO2 on Si.
Bibliographical noteFunding Information:
This work was supported primarily by the National Science Foundation through the University of Minnesota MRSEC under Award Number DMR-1420013 and in part by the Arnold and Mabel Beckman Foundation through a Beckman Young Investigator Award. The RTA was performed in the Minnesota Nanofabrication Center (MNC) which is partially supported by the NSF NNIN program. The IRM is a US National Multi-user Facility supported through the Instrumentation and Facilities program of the National Science Foundation, Earth Sciences Division, and by funding from the University of Minnesota. This work also received supported from the Division of Materials Research.
© 2017 The Author(s). Published by Informa UK Limited, trading as Taylor & Francis Group.
- in situ TEM
- magnetic insulator
- rapid thermal annealing
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- Period 3