SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax

S. J. Koester; R. Hammond; J. O. Chu; P. M. Mooney; J. A. Ott; L. Perraud; K. A. Jenkins; C. S. Webster; I. Lagnado; P. R. De La Houssaye

doi:10.1109/55.902842

SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz f_max

S. J. Koester, R. Hammond, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins, C. S. Webster, I. Lagnado, P. R. De La Houssaye

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

33 Scopus citations

Abstract

The dc and microwave results of Si_0.2Ge_0.8/Si_0.7Ge_0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with L_g = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm² devices yielded unity current gain (f_T) and unilateral power gain (f_max) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm² devices revealed minimum noise figure (F_min) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.

Original language	English (US)
Pages (from-to)	92-94
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	22
Issue number	2
DOIs	https://doi.org/10.1109/55.902842
State	Published - Feb 2001

Bibliographical note

Funding Information:
Manuscript received September 6, 2000. This work was supported by SPAWAR Systems Center, SD/Office of Naval Research under Contract N66001-99-C-6000. The review of this letter was arranged by Editor K. De Meyer. S. J. Koester, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins are with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA. R. Hammond is with Amberwave Systems Corporation, Salem NH 03079 USA. C. S. Webster is with Agilent Technologies, Williston, VT 05495 USA. I. Lagnado and P. R. de la Houssaye are with the Space and Naval Warfare Systems Center, San Diego, CA 92152 USA. Publisher Item Identifier S 0741-3106(01)01239-3.

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title = "SiGe pMODFETs on silicon-on-sapphire substrates with 116 GHz fmax",

abstract = "The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.",

author = "Koester, {S. J.} and R. Hammond and Chu, {J. O.} and Mooney, {P. M.} and Ott, {J. A.} and L. Perraud and Jenkins, {K. A.} and Webster, {C. S.} and I. Lagnado and {De La Houssaye}, {P. R.}",

note = "Funding Information: Manuscript received September 6, 2000. This work was supported by SPAWAR Systems Center, SD/Office of Naval Research under Contract N66001-99-C-6000. The review of this letter was arranged by Editor K. De Meyer. S. J. Koester, J. O. Chu, P. M. Mooney, J. A. Ott, L. Perraud, K. A. Jenkins are with the IBM Thomas J. Watson Research Center, Yorktown Heights, NY 10598 USA. R. Hammond is with Amberwave Systems Corporation, Salem NH 03079 USA. C. S. Webster is with Agilent Technologies, Williston, VT 05495 USA. I. Lagnado and P. R. de la Houssaye are with the Space and Naval Warfare Systems Center, San Diego, CA 92152 USA. Publisher Item Identifier S 0741-3106(01)01239-3.",

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AU - Koester, S. J.

AU - Hammond, R.

AU - Chu, J. O.

AU - Mooney, P. M.

AU - Ott, J. A.

AU - Perraud, L.

AU - Jenkins, K. A.

AU - Webster, C. S.

AU - Lagnado, I.

AU - De La Houssaye, P. R.

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N2 - The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.

AB - The dc and microwave results of Si0.2Ge0.8/Si0.7Ge0.3 pMODFETs grown on silicon-on-sapphire (SOS) substrates by ultrahigh vacuum chemical vapor deposition are reported. Devices with Lg = 0.1 μm displayed high transconductance (377 mS/mm), low output conductance (25 mS/mm), and high gate-to-drain breakdown voltage (4 V). The dc current-voltage (I-V) characteristics were also nearly identical to those of control devices grown on bulk Si substrates. Microwave characterization of 0.1×50 μm2 devices yielded unity current gain (fT) and unilateral power gain (fmax) cutoff frequencies as high as 50 GHz and 116 GHz, respectively. Noise parameter characterization of 0.1×90 μm2 devices revealed minimum noise figure (Fmin) of 0.6 dB at 3 GHz and 2.5 dB at 20 GHz.

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