TY - JOUR
T1 - Silicon carbide nanowires under external loads
T2 - An atomistic simulation study
AU - Makeev, Maxim A.
AU - Srivastava, Deepak
AU - Menon, Madhu
PY - 2006
Y1 - 2006
N2 - The nanomechanical response properties of 3C-SiC nanowires are investigated using molecular dynamics simulation with Tersoff bond-order interatomic potential. Under axial compression and tensile strain, the computed Young's modulus and structural changes at elastic limit do not depend appreciably on the diameter of the nanowire except for the nanowire of the smallest diameter (≈1 nm) under compression. The elastic modulus and structural failure near the elastic limit regime, for nonaxial bending and torsional strains, are found to depend strongly on the nanowire diameters through a power-law behavior. The exponent of the power-law behavior and mechanisms of the material failure under different types of loading strains are described in this work.
AB - The nanomechanical response properties of 3C-SiC nanowires are investigated using molecular dynamics simulation with Tersoff bond-order interatomic potential. Under axial compression and tensile strain, the computed Young's modulus and structural changes at elastic limit do not depend appreciably on the diameter of the nanowire except for the nanowire of the smallest diameter (≈1 nm) under compression. The elastic modulus and structural failure near the elastic limit regime, for nonaxial bending and torsional strains, are found to depend strongly on the nanowire diameters through a power-law behavior. The exponent of the power-law behavior and mechanisms of the material failure under different types of loading strains are described in this work.
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U2 - 10.1103/PhysRevB.74.165303
DO - 10.1103/PhysRevB.74.165303
M3 - Article
AN - SCOPUS:33749436721
SN - 1098-0121
VL - 74
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 16
M1 - 165303
ER -