Simulation of GaAs p-i-n Diodes

A. Gopinath, H. Atwater

Research output: Contribution to journalArticlepeer-review

13 Scopus citations

Abstract

GaAs p-i-n diodes have been modeled using simulation, and the results have been compared to experiment. The simulations predict that with a lifetime of the carriers of 10-7 s, devices that have good i-layer modulation may be built. This is in agreement with currently available commercial devices.

Original languageEnglish (US)
Pages (from-to)414-417
Number of pages4
JournalIEEE Transactions on Electron Devices
Volume35
Issue number4
DOIs
StatePublished - Apr 1988

Bibliographical note

Funding Information:
Manuscript received August, 24, 1987; revised November 17, 1987. This work was sponsored by the Department of the Army. A. Gopinath was with the MIT Lincoln Laboratory, Lexington, MA 02173. He is now with the Department of Electrical Engineering, University of Minnesota, Minneapolis, MN 55455. H. Atwater was with the MIT Lincoln Laboratory, Lexington, MA 02173. He is now with the Naval Postgraduate School, Monterey, CA 93940. IEEE Log Number 8718964.

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