Abstract
Simulation of silicon anisotropic etching is made using cellular automata method. According to material property of silicon and etching process, the relevant function is listed. Moreover, a software named SSAE is finished with which the etching process and results can be simulated. Its results accord to other softwares and experiments. Compared with other similar software, SSAE has some advantages, such as independence to hardware and operation system, economization, high simulation speed, etc.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 618-623 |
| Number of pages | 6 |
| Journal | Pan Tao Ti Hsueh Pao/Chinese Journal of Semiconductors |
| Volume | 26 |
| Issue number | 3 |
| State | Published - Mar 2005 |
Keywords
- Anisotropic etching
- Cellular automata
- Simulation