Simulations of atomic level stresses in systems of buried Ge/Si islands

Maxim Makeev, A. Madhukar

Research output: Contribution to journalArticlepeer-review

51 Scopus citations

Abstract

Atomistic simulation of a system of buried pyramidal islands using the Stillinger-Weber Ge/Si system as a vehicle was conducted. It was found that the hydrostatic stress on the spacer surface above the island apex varies as 1/hsp and is proportional to the island area.

Original languageEnglish (US)
Pages (from-to)5542-5545
Number of pages4
JournalPhysical Review Letters
Volume86
Issue number24
DOIs
StatePublished - Jun 11 2001

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