TY - GEN
T1 - Simultaneous spin and charge transport in gated Si devices
AU - Li, Jing
AU - Appelbaum, Ian
PY - 2011
Y1 - 2011
N2 - Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1-3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.
AB - Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1-3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.
UR - http://www.scopus.com/inward/record.url?scp=84880734081&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84880734081&partnerID=8YFLogxK
U2 - 10.1109/DRC.2011.5994469
DO - 10.1109/DRC.2011.5994469
M3 - Conference contribution
AN - SCOPUS:84880734081
SN - 9781612842417
T3 - Device Research Conference - Conference Digest, DRC
SP - 159
EP - 160
BT - 69th Device Research Conference, DRC 2011 - Conference Digest
T2 - 69th Device Research Conference, DRC 2011
Y2 - 20 June 2011 through 22 June 2011
ER -
