Simultaneous spin and charge transport in gated Si devices

Jing Li, Ian Appelbaum

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Recent advances in the development of techniques for electrical injection and detection of spin-polarized electrons in silicon have aroused intensive research on exploiting devices and circuits that utilize the spin degree of freedom [1-3] as well as electron charge in this dominant material of the semiconductor integrated circuits industry.

Original languageEnglish (US)
Title of host publication69th Device Research Conference, DRC 2011 - Conference Digest
Pages159-160
Number of pages2
DOIs
StatePublished - Dec 1 2011
Event69th Device Research Conference, DRC 2011 - Santa Barbara, CA, United States
Duration: Jun 20 2011Jun 22 2011

Publication series

NameDevice Research Conference - Conference Digest, DRC
ISSN (Print)1548-3770

Other

Other69th Device Research Conference, DRC 2011
CountryUnited States
CitySanta Barbara, CA
Period6/20/116/22/11

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