We perform quantum Hall measurements on three types of commercially available modulation-doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 × 10 11/cm 2 and mobilities in excess of 100 000 cm 2/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.
Bibliographical noteFunding Information:
C.P. acknowledges partial support from FQRNT. Research at Princeton was supported by the Sloan and Packard Foundations, the NSF through the Princeton Center for Complex Materials (DMR-0819860) and EMT/QIS award (CCF-0829872), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government.