Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

C. Payette; K. Wang; P. J. Koppinen; Y. Dovzhenko; J. C. Sturm; J. R. Petta

doi:10.1063/1.3678043

Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

C. Payette, K. Wang, P. J. Koppinen, Y. Dovzhenko, J. C. Sturm, J. R. Petta

Physics and Astronomy (Twin Cities)

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Abstract

We perform quantum Hall measurements on three types of commercially available modulation-doped Si/SiGe heterostructures to determine their suitability for depletion gate defined quantum dot devices. By adjusting the growth parameters, we are able to achieve electron gases with charge densities 1-3 × 10 ¹¹/cm ² and mobilities in excess of 100 000 cm ²/Vs. Double quantum dot devices fabricated on these heterostructures show clear evidence of single charge transitions as measured in dc transport and charge sensing and exhibit electron temperatures of 100 mK in the single quantum dot regime.

Original language	English (US)
Article number	043508
Journal	Applied Physics Letters
Volume	100
Issue number	4
DOIs	https://doi.org/10.1063/1.3678043
State	Published - Jan 23 2012

Bibliographical note

Funding Information:
C.P. acknowledges partial support from FQRNT. Research at Princeton was supported by the Sloan and Packard Foundations, the NSF through the Princeton Center for Complex Materials (DMR-0819860) and EMT/QIS award (CCF-0829872), and the United States Department of Defense. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressly or implied, of the U.S. Government.

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AU - Sturm, J. C.

AU - Petta, J. R.

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Single charge sensing and transport in double quantum dots fabricated from commercially grown Si/SiGe heterostructures

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