TY - JOUR
T1 - SOI wafer mold with high-aspect-ratio microstructures for hot embossing process
AU - Zhao, Y.
AU - Cui, T.
PY - 2004/10
Y1 - 2004/10
N2 - This paper reports using a Silicon oil insulator (SOI) wafer as a mold insert for the hot embossing process on high-aspect-ratio microstructures to overcome two drawbacks of Inductive Coupled Etching (ICP) process, the area dependent etching and the micrograss. A thin sacrificial wall to eliminate the undercut in the big open area during ICP etching is also described. A good result of final embossed structure on PMMA with aspect ratio of 12 : 1, uniform thickness, and smooth surface is presented.
AB - This paper reports using a Silicon oil insulator (SOI) wafer as a mold insert for the hot embossing process on high-aspect-ratio microstructures to overcome two drawbacks of Inductive Coupled Etching (ICP) process, the area dependent etching and the micrograss. A thin sacrificial wall to eliminate the undercut in the big open area during ICP etching is also described. A good result of final embossed structure on PMMA with aspect ratio of 12 : 1, uniform thickness, and smooth surface is presented.
UR - http://www.scopus.com/inward/record.url?scp=10044238055&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=10044238055&partnerID=8YFLogxK
U2 - 10.1007/s00542-004-0390-7
DO - 10.1007/s00542-004-0390-7
M3 - Article
AN - SCOPUS:10044238055
SN - 0946-7076
VL - 10
SP - 544
EP - 546
JO - Microsystem Technologies
JF - Microsystem Technologies
IS - 6-7
ER -