Solution-gated ion-sensitive field effect transistor with polymer selective membrane for nitrate detection

Jungyoon Kim, Qingyuan Liu, Tianhong Cui

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations

Abstract

In the paper, we fabricated a solution-gated ion-sensitive field effect transistor (IS-FET) and synthesized a selective membrane for the selective detection of nitrate. For sensor response, the level of Dirac point is measured to check the amount of nitrate in the water. Nitrate selective membrane is coated on graphene using a spin-coating method. The IS-FET is tested with four different ion solutions including chloride, sulfate, phosphate and nitrate at four different concentrations (0.1, 1, 10, 100 ppm). The Dirac point shift from -0.56 V to - 0.36 V as increasing the concentration. The detection limit is 0.1 ppm, and the response time is less than 1 min.

Original languageEnglish (US)
Title of host publicationAdvanced Manufacturing
PublisherAmerican Society of Mechanical Engineers (ASME)
ISBN (Electronic)9780791852019
DOIs
StatePublished - Jan 1 2018
EventASME 2018 International Mechanical Engineering Congress and Exposition, IMECE 2018 - Pittsburgh, United States
Duration: Nov 9 2018Nov 15 2018

Publication series

NameASME International Mechanical Engineering Congress and Exposition, Proceedings (IMECE)
Volume2

Conference

ConferenceASME 2018 International Mechanical Engineering Congress and Exposition, IMECE 2018
CountryUnited States
CityPittsburgh
Period11/9/1811/15/18

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