Solution-processed carbon nanotube thin-film complementary static random access memory

Michael L. Geier, Julian J. McMorrow, Weichao Xu, Jian Zhu, Chris H. Kim, Tobin J. Marks, Mark C. Hersam

Research output: Contribution to journalArticlepeer-review

136 Scopus citations

Abstract

Over the past two decades, extensive research on single-walled carbon nanotubes (SWCNTs) has elucidated their many extraordinary properties, making them one of the most promising candidates for solution-processable, high-performance integrated circuits. In particular, advances in the enrichment of high-purity semiconducting SWCNTs have enabled recent circuit demonstrations including synchronous digital logic, flexible electronics and high-frequency applications. However, due to the stringent requirements of the transistors used in complementary metal-oxide-semiconductor (CMOS) logic as well as the absence of sufficiently stable and spatially homogeneous SWCNT thin-film transistors, the development of large-scale SWCNT CMOS integrated circuits has been limited in both complexity and functionality. Here, we demonstrate the stable and uniform electronic performance of complementary p-type and n-type SWCNT thin-film transistors by controlling adsorbed atmospheric dopants and incorporating robust encapsulation layers. Based on these complementary SWCNT thin-film transistors, we simulate, design and fabricate arrays of low-power static random access memory circuits, achieving large-scale integration for the first time based on solution-processed semiconductors.

Original languageEnglish (US)
Pages (from-to)944-948
Number of pages5
JournalNature Nanotechnology
Volume10
Issue number11
DOIs
StatePublished - Nov 1 2015

Bibliographical note

Funding Information:
This work was supported by the Office of Naval Research MURI Program (N00014-11-1-0690) and the National Science Foundation (DMR-1006391, DMR-1121262 and CCF-0845605). A National Science Foundation Graduate Research Fellowship (M.L.G.) and a NASA Space Technology Research Fellowship (J.J.M.) are also acknowledged. Device fabrication was performed at the NUFAB cleanroom facility at Northwestern University.

Publisher Copyright:
© 2015 Macmillan Publishers Limited. All rights reserved.

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