Spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability

Tae Won Kim; Eray S. Aydil

doi:10.1109/TPS.2002.1003953

Spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability

Tae Won Kim, Eray S. Aydil

Chemical Engineering and Materials Science

Research output: Contribution to journal › Article › peer-review

4 Scopus citations

Abstract

An array of planar Langmuir probes on a 75 mm diameter wafer was designed, built and used to measure the variation of ion flux and its spatiotemporal distribution at the plane of wafer in an inductively coupled plasma reactor. The use of this probe array was demonstrated to detect, monitor and display the spatiotemporal variation of the ion flux in presence of a plasma instability. The ion flux distributions were collected in an inductively coupled plasma reactor. Argon plasma was also created using a spiral coil wrapped around a 150-mm diameter quartz tube and powered by a 13.56 MHz radio frequency generator.

Original language	English (US)
Pages (from-to)	120-121
Number of pages	2
Journal	IEEE Transactions on Plasma Science
Volume	30
Issue number	1 I
DOIs	https://doi.org/10.1109/TPS.2002.1003953
State	Published - Feb 2002

Bibliographical note

Funding Information:
Manuscript received July 3, 2001; revised October 9, 2001. This work was supported in part by the State of California SMART program under research contract SM99-01, and by the following participating companies: Advanced Energy, ASML, Atmel Corp., Advanced Micro Devices, Applied Materials, Asyst Technologies Inc., Cymer, Etec Systems Inc., Intel Corporation, KLA-TENCOR, Lam Research Corp., Nikon Research Corp., Novellus Systems Inc., Silicon Valley Group, and Tokyo Electron Limited.

Keywords

Plasma materials-processing applications
Plasma measurements
Plasma oscillations
Plasma stability

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title = "Spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability",

abstract = "An array of planar Langmuir probes on a 75 mm diameter wafer was designed, built and used to measure the variation of ion flux and its spatiotemporal distribution at the plane of wafer in an inductively coupled plasma reactor. The use of this probe array was demonstrated to detect, monitor and display the spatiotemporal variation of the ion flux in presence of a plasma instability. The ion flux distributions were collected in an inductively coupled plasma reactor. Argon plasma was also created using a spiral coil wrapped around a 150-mm diameter quartz tube and powered by a 13.56 MHz radio frequency generator.",

keywords = "Plasma materials-processing applications, Plasma measurements, Plasma oscillations, Plasma stability",

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note = "Funding Information: Manuscript received July 3, 2001; revised October 9, 2001. This work was supported in part by the State of California SMART program under research contract SM99-01, and by the following participating companies: Advanced Energy, ASML, Atmel Corp., Advanced Micro Devices, Applied Materials, Asyst Technologies Inc., Cymer, Etec Systems Inc., Intel Corporation, KLA-TENCOR, Lam Research Corp., Nikon Research Corp., Novellus Systems Inc., Silicon Valley Group, and Tokyo Electron Limited.",

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AB - An array of planar Langmuir probes on a 75 mm diameter wafer was designed, built and used to measure the variation of ion flux and its spatiotemporal distribution at the plane of wafer in an inductively coupled plasma reactor. The use of this probe array was demonstrated to detect, monitor and display the spatiotemporal variation of the ion flux in presence of a plasma instability. The ion flux distributions were collected in an inductively coupled plasma reactor. Argon plasma was also created using a spiral coil wrapped around a 150-mm diameter quartz tube and powered by a 13.56 MHz radio frequency generator.

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KW - Plasma oscillations

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Spatial and temporal variation of the ion flux impinging on the wafer surface in presence of a plasma instability

Abstract

Bibliographical note

Keywords

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