The spins of localized electrons in silicon are strong candidates for quantum information processing because of their extremely long coherence times and the integrability of Si within the present microelectronics infrastructure. This paper reviews a strategy for fabricating single electron spin qubits in gated quantum dots in Si/SiGe heterostructures. We discuss the pros and cons of using silicon, present recent advances, and outline challenges.
Bibliographical noteFunding Information:
We thank Steve Lyon, Alex Rimberg, and the University of Wisconsin solid state quantum computing group for many fruitful discussions. We acknowledge support from ARDA, ARO, and NSF.
- Quantum computation
- Quantum dot
- Quantum well