Spin injection from perpendicular magnetized ferromagnetic δ-MnGa into (Al,Ga)As heterostructures

C. Adelmann, J. L. Hilton, B. D. Schultz, S. McKernan, C. J. Palmstrøm, X. Lou, H. S. Chiang, P. A. Crowell

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Abstract

Electrical spin injection from ferromagnetic δ-MnGa into an (Al,Ga)As p-i-n light-emitting diode (LED) is demonstrated. The δ-MnGa layers show strong perpendicular magnetocrystalline anisotropy, enabling detection of spin injection at remanence, without an applied magnetic field. The bias and temperature dependence of the spin injection are found to be qualitatively similar to Fe-based spin LED devices. A Hanle effect is observed and demonstrates complete depolarization of spins in the semiconductor in a transverse magnetic field.

Original languageEnglish (US)
Article number112511
JournalApplied Physics Letters
Volume89
Issue number11
DOIs
StatePublished - 2006

Bibliographical note

Funding Information:
The authors thank X. Y. Dong and M. Nishioka for assistance with the SQUID measurements. This work was supported by the Office of Naval Research, the DARPA SpinS Program, the University of Minnesota MRSEC (DMR 02-12302), and the NSF National Nanotechnology Infrastructure Network through the University of Minnesota Nanofabrication Center.

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