Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators

Prabesh Dulal; Thomas E. Gage; Andrew D. Block; Emiliana Cofell; David C. Hutchings; Bethanie J.H. Stadler

doi:10.1109/IPCon.2016.7831308

Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators

Prabesh Dulal, Thomas E. Gage, Andrew D. Block, Emiliana Cofell, David C. Hutchings, Bethanie J.H. Stadler

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

Ce_xTb_3-xFe₅O₁₂ (Ce:TIG) films (Faraday rotation =-2600°/cm) were grown on Si and quartz substrates without seedlayers. Silicon-on-Insulator (SOI) waveguide simulations were done on devices with Ce:TIG-claddings and compared with Ce_xY_3-xFe₅O₁₂ (Ce:YIG) claddings grown on YIG-seedlayers. Results show that Ce:TIG-claddings are three times more efficient than Ce:YIG/YIG claddings.

Original language	English (US)
Title of host publication	2016 IEEE Photonics Conference, IPC 2016
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	773-774
Number of pages	2
ISBN (Electronic)	9781509019069
DOIs	https://doi.org/10.1109/IPCon.2016.7831308
State	Published - Jan 23 2017
Event	29th IEEE Photonics Conference, IPC 2016 - Waikoloa, United States Duration: Oct 2 2016 → Oct 6 2016

Publication series

Name	2016 IEEE Photonics Conference, IPC 2016

Other

Other	29th IEEE Photonics Conference, IPC 2016
Country	United States
City	Waikoloa
Period	10/2/16 → 10/6/16

Access

10.1109/IPCon.2016.7831308

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Dulal, P., Gage, T. E., Block, A. D., Cofell, E., Hutchings, D. C., & Stadler, B. J. H. (2017). Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators. In 2016 IEEE Photonics Conference, IPC 2016 (pp. 773-774). [7831308] (2016 IEEE Photonics Conference, IPC 2016). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IPCon.2016.7831308

Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators. / Dulal, Prabesh; Gage, Thomas E.; Block, Andrew D.; Cofell, Emiliana; Hutchings, David C.; Stadler, Bethanie J.H.

2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. p. 773-774 7831308 (2016 IEEE Photonics Conference, IPC 2016).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Dulal, P, Gage, TE, Block, AD, Cofell, E, Hutchings, DC & Stadler, BJH 2017, Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators. in 2016 IEEE Photonics Conference, IPC 2016., 7831308, 2016 IEEE Photonics Conference, IPC 2016, Institute of Electrical and Electronics Engineers Inc., pp. 773-774, 29th IEEE Photonics Conference, IPC 2016, Waikoloa, United States, 10/2/16. https://doi.org/10.1109/IPCon.2016.7831308

Dulal P, Gage TE, Block AD, Cofell E, Hutchings DC, Stadler BJH. Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators. In 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc. 2017. p. 773-774. 7831308. (2016 IEEE Photonics Conference, IPC 2016). https://doi.org/10.1109/IPCon.2016.7831308

Dulal, Prabesh ; Gage, Thomas E. ; Block, Andrew D. ; Cofell, Emiliana ; Hutchings, David C. ; Stadler, Bethanie J.H. / Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators. 2016 IEEE Photonics Conference, IPC 2016. Institute of Electrical and Electronics Engineers Inc., 2017. pp. 773-774 (2016 IEEE Photonics Conference, IPC 2016).

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title = "Sputter-deposited seedlayer-free cerium-doped terbium iron garnets for SOI waveguide isolators",

abstract = "CexTb3-xFe5O12 (Ce:TIG) films (Faraday rotation =-2600°/cm) were grown on Si and quartz substrates without seedlayers. Silicon-on-Insulator (SOI) waveguide simulations were done on devices with Ce:TIG-claddings and compared with CexY3-xFe5O12 (Ce:YIG) claddings grown on YIG-seedlayers. Results show that Ce:TIG-claddings are three times more efficient than Ce:YIG/YIG claddings.",

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AB - CexTb3-xFe5O12 (Ce:TIG) films (Faraday rotation =-2600°/cm) were grown on Si and quartz substrates without seedlayers. Silicon-on-Insulator (SOI) waveguide simulations were done on devices with Ce:TIG-claddings and compared with CexY3-xFe5O12 (Ce:YIG) claddings grown on YIG-seedlayers. Results show that Ce:TIG-claddings are three times more efficient than Ce:YIG/YIG claddings.

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