Sputtered metal oxide broken gap junctions

Stephen Campbell; Forrest Johnson; Sreejith Karthikeyan; Sang Ho Song; Richard Liptak; Brian Benton

doi:10.1149/06102.0363ecst

Sputtered metal oxide broken gap junctions

Stephen Campbell, Forrest Johnson, Sreejith Karthikeyan, Sang Ho Song, Richard Liptak, Brian Benton

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO₂ target and a reactively sputtered copper target we deposited ZnSnO₃ and Cu₂O for the ntype and p-type layers, respectively. AlCuO₂ can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.

Original language	English (US)
Title of host publication	ECS Transactions
Publisher	Electrochemical Society Inc.
Pages	363-372
Number of pages	10
Volume	61
Edition	2
DOIs	https://doi.org/10.1149/06102.0363ecst
State	Published - 2014
Event	6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting - Orlando, United States Duration: May 11 2014 → May 15 2014

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Other	6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting
Country/Territory	United States
City	Orlando
Period	5/11/14 → 5/15/14

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Campbell, S, Johnson, F, Karthikeyan, S, Song, SH, Liptak, R & Benton, B 2014, Sputtered metal oxide broken gap junctions. in ECS Transactions. 2 edn, vol. 61, Electrochemical Society Inc., pp. 363-372, 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting, Orlando, United States, 5/11/14. https://doi.org/10.1149/06102.0363ecst

@inproceedings{31378511642d4ce8ad03f794e38f26b9,

title = "Sputtered metal oxide broken gap junctions",

abstract = "Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we deposited ZnSnO3 and Cu2O for the ntype and p-type layers, respectively. AlCuO2 can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.",

author = "Stephen Campbell and Forrest Johnson and Sreejith Karthikeyan and Song, {Sang Ho} and Richard Liptak and Brian Benton",

year = "2014",

doi = "10.1149/06102.0363ecst",

language = "English (US)",

volume = "61",

pages = "363--372",

booktitle = "ECS Transactions",

publisher = "Electrochemical Society Inc.",

edition = "2",

note = "6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting ; Conference date: 11-05-2014 Through 15-05-2014",

}

TY - GEN

T1 - Sputtered metal oxide broken gap junctions

AU - Campbell, Stephen

AU - Johnson, Forrest

AU - Karthikeyan, Sreejith

AU - Song, Sang Ho

AU - Liptak, Richard

AU - Benton, Brian

PY - 2014

Y1 - 2014

N2 - Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we deposited ZnSnO3 and Cu2O for the ntype and p-type layers, respectively. AlCuO2 can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.

AB - Broken gap metal oxide tunnel junctions have been created by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we deposited ZnSnO3 and Cu2O for the ntype and p-type layers, respectively. AlCuO2 can also be used for the p-type layer. It shows better thermal uniformity and improved optical transmittance, but somewhat higher specific junction resistance. The band structure of the respective materials have theoretical work functions which line up with the band structure for a tandem solar cell and quantum dot LED applications. Asdeposited films demonstrated a dependence of the I-V profile with post-deposition rapid thermal anneal. Total junction specific contact resistances under 1 ohm-cm2 have been achieved.

UR - http://www.scopus.com/inward/record.url?scp=84925127757&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84925127757&partnerID=8YFLogxK

U2 - 10.1149/06102.0363ecst

DO - 10.1149/06102.0363ecst

M3 - Conference contribution

AN - SCOPUS:84925127757

VL - 61

SP - 363

EP - 372

BT - ECS Transactions

PB - Electrochemical Society Inc.

T2 - 6th International Symposium on Dielectrics for Nanosystems: Materials Science, Processing, Reliability and Manufacturing - 225th ECS Meeting

Y2 - 11 May 2014 through 15 May 2014

ER -

Sputtered metal oxide broken gap junctions

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