Sputtering of metal oxide tunnel junctions for tandem solar cells

Forrest Johnson, Sang Ho Song, Richard Liptak, Boris Chernomordik, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations

Abstract

Broken gap metal oxide tunnel junctions have been created for the first time by sputtering. Using a ceramic ZnO-SnO2 target and a reactively sputtered copper target we created ZnSnO3 and Cu2O for the n-type and p-type layers, respectively. The band structure of the respective materials have theoretical work functions which line up with the band structure for tandem CIGS-based solar cell applications. As-deposited films demonstrated a dependence of the I-V profile with post-deposition Rapid Thermal Anneal (RTA) and substrate selection. Total junction specific contact resistances under 1Ω-cm2 have been achieved.

Original languageEnglish (US)
Title of host publication39th IEEE Photovoltaic Specialists Conference, PVSC 2013
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages1120-1125
Number of pages6
ISBN (Print)9781479932993
DOIs
StatePublished - Jan 1 2013
Event39th IEEE Photovoltaic Specialists Conference, PVSC 2013 - Tampa, FL, United States
Duration: Jun 16 2013Jun 21 2013

Publication series

NameConference Record of the IEEE Photovoltaic Specialists Conference
ISSN (Print)0160-8371

Other

Other39th IEEE Photovoltaic Specialists Conference, PVSC 2013
CountryUnited States
CityTampa, FL
Period6/16/136/21/13

Keywords

  • Amorphous materials
  • Conductive films
  • Optical films
  • Solar energy
  • Sputtering
  • Thin films
  • Tunneling

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