SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Jiaxuan Wen; V. R. Saran Kumar Chaganti; Tristan K. Truttmann; Fengdeng Liu; Bharat Jalan; Steven J. Koester

doi:10.1109/LED.2020.3040417

SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Jiaxuan Wen, V. R. Saran Kumar Chaganti, Tristan K. Truttmann, Fengdeng Liu, Bharat Jalan, Steven J. Koester

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

Original language	English (US)
Article number	9269996
Pages (from-to)	74-77
Number of pages	4
Journal	IEEE Electron Device Letters
Volume	42
Issue number	1
DOIs	https://doi.org/10.1109/LED.2020.3040417
State	Published - Jan 2021
Externally published	Yes

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

Keywords

MESFET
RF
SrSnOâ
perovskite
stannate

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title = "SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation",

abstract = "A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.",

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author = "Jiaxuan Wen and {Saran Kumar Chaganti}, {V. R.} and Truttmann, {Tristan K.} and Fengdeng Liu and Bharat Jalan and Koester, {Steven J.}",

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AU - Liu, Fengdeng

AU - Jalan, Bharat

AU - Koester, Steven J.

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N2 - A SrSnO3 high-frequency field-effect transistor (FET) is demonstrated. The device structure consists of a recessed Schottky-gate FET with a heavily doped cap layer. DC measurements on devices with 0.5- μm gate length and 4- μm source/drain spacing show a maximum drain current of 53 mA/mm and a maximum transconductance of 43.2 mS/mm. Radio frequency (RF) characterization reveals a cut-off frequency, fT , of 1.31 GHz (0.97 GHz) and a maximum oscillation frequency, fmax, of 3.25 (3.25) GHz, after (before) de-embedding. These results represent an important advancement in developing perovskite materials for RF applications.

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SrSnO Metal-Semiconductor Field-Effect Transistor with GHz Operation

Abstract

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Keywords

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