Projects per year
Abstract
Fabrication of gate-recessed SrSnO3 (SSO) metal-semiconductor field-effect transistors (MESFETs) with Ni Schottky gates is reported on bi-layer epitaxial SSO films with a thin heavily-doped cap layer. Devices with 0.5-μm gate length showed enhancement-mode behavior with a saturation drain current, IDSAT , of 33 mA/mm and peak transconductance, gm,max , of 65 mS/mm. The gm,max value is a roughly × improvement over control devices fabricated on single-layer films. Gate-recessed SSO MESFETs with Pt Schottky gates were also explored on the bi-layer films. Devices with 1-μm gate length displayed IDSAT =133 mA/mm and gm,max =73 mS/mm, after thermal annealing.
Original language | English (US) |
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Article number | 9145756 |
Pages (from-to) | 1428-1431 |
Number of pages | 4 |
Journal | IEEE Electron Device Letters |
Volume | 41 |
Issue number | 9 |
DOIs | |
State | Published - Sep 2020 |
Keywords
- gate recess
- MESFET
- perovskites
- stannate
How much support was provided by MRSEC?
- Partial
Reporting period for MRSEC
- Period 1
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- 2 Active
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University of Minnesota Materials Research Science and Engineering Center (DMR-2011401)
THE NATIONAL SCIENCE FOUNDATION
9/1/20 → 8/31/26
Project: Research project
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MRSEC IRG-1: Electrostatic Control of Materials
Leighton, C., Birol, T., Fernandes, R. M., Frisbie, D., Goldman, A. M., Greven, M., Jalan, B., Koester, S. J., He, T., Jeong, J. S., Koirala, S., Paul, A., Thoutam, L. R. & Yu, G.
9/1/98 → …
Project: Research project