Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs

D. V. Singh; S. J. Koester; J. O. Chu; K. A. Jenkins; P. M. Mooney; Q. C. Ouyang; N. Ruiz; J. A. Ott; D. Ralston; M. Wetzel; P. M. Asbeck; K. L. Saenger; V. V. Patel; A. Grill

doi:10.1049/el:20030353

Static frequency divider circuit using 0.15 μm gate length Si_0.2Ge_0.8/Si_0.7Ge_0.3 p-MODFETs

D. V. Singh, S. J. Koester, J. O. Chu, K. A. Jenkins, P. M. Mooney, Q. C. Ouyang, N. Ruiz, J. A. Ott, D. Ralston, M. Wetzel, P. M. Asbeck, K. L. Saenger, V. V. Patel, A. Grill

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.

Original language	English (US)
Pages (from-to)	570-572
Number of pages	3
Journal	Electronics Letters
Volume	39
Issue number	6
DOIs	https://doi.org/10.1049/el:20030353
State	Published - Mar 20 2003

Access

10.1049/el:20030353

OpenUrl availability

Full text

Cite this

@article{5750e66cb2854ba5b8d4f9ac7f2afc7b,

title = "Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs",

abstract = "The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.",

author = "Singh, {D. V.} and Koester, {S. J.} and Chu, {J. O.} and Jenkins, {K. A.} and Mooney, {P. M.} and Ouyang, {Q. C.} and N. Ruiz and Ott, {J. A.} and D. Ralston and M. Wetzel and Asbeck, {P. M.} and Saenger, {K. L.} and Patel, {V. V.} and A. Grill",

year = "2003",

month = mar,

day = "20",

doi = "10.1049/el:20030353",

language = "English (US)",

volume = "39",

pages = "570--572",

journal = "Electronics Letters",

issn = "0013-5194",

publisher = "Institution of Engineering and Technology",

number = "6",

}

TY - JOUR

T1 - Static frequency divider circuit using 0.15 μm gate length Si0.2Ge0.8/Si0.7Ge0.3 p-MODFETs

AU - Singh, D. V.

AU - Koester, S. J.

AU - Chu, J. O.

AU - Jenkins, K. A.

AU - Mooney, P. M.

AU - Ouyang, Q. C.

AU - Ruiz, N.

AU - Ott, J. A.

AU - Ralston, D.

AU - Wetzel, M.

AU - Asbeck, P. M.

AU - Saenger, K. L.

AU - Patel, V. V.

AU - Grill, A.

PY - 2003/3/20

Y1 - 2003/3/20

N2 - The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.

AB - The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.

UR - http://www.scopus.com/inward/record.url?scp=0037456889&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0037456889&partnerID=8YFLogxK

U2 - 10.1049/el:20030353

DO - 10.1049/el:20030353

M3 - Article

AN - SCOPUS:0037456889

SN - 0013-5194

VL - 39

SP - 570

EP - 572

JO - Electronics Letters

JF - Electronics Letters

IS - 6

ER -

Static frequency divider circuit using 0.15 μm gate length Si_0.2Ge_0.8/Si_0.7Ge_0.3 p-MODFETs

Abstract

Access

OpenUrl availability

Other files and links

Fingerprint

Cite this