Abstract
The demonstration of an integrated circuit was performed by using high mobility p-channel modulation doped field effect transistors (MODFET). The circuit was based on source-coupled FET logic and also included level-shifted source followers to match the output voltages with respect to the input voltages required by the devices. It was found that the circuits operated up to a maximum clock frequency of 2.9 GHz.
Original language | English (US) |
---|---|
Pages (from-to) | 570-572 |
Number of pages | 3 |
Journal | Electronics Letters |
Volume | 39 |
Issue number | 6 |
DOIs | |
State | Published - Mar 20 2003 |