Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique

Saurabh Kumar; Minki Cho; Luke Everson; Hoonki Kim; Qianying Tang; Paul Mazanec; Pascal Meinerzhagen; Andres Malavasi; Dan Lake; Carlos Tokunaga; Heather Quinn; Muhammad Khellah; James Tschanz; Shekhar Borkar; Vivek De; Chris H. Kim

doi:10.23919/VLSIT.2017.7998134

Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique

Saurabh Kumar, Minki Cho, Luke Everson, Hoonki Kim, Qianying Tang, Paul Mazanec, Pascal Meinerzhagen, Andres Malavasi, Dan Lake, Carlos Tokunaga, Heather Quinn, Muhammad Khellah, James Tschanz, Shekhar Borkar, Vivek De, Chris H. Kim

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

5 Scopus citations

Abstract

A novel BSC circuit with tunable current starved buffers demonstrates higher sensitivity, scalability & accurate statistical characterization of radiation-induced SET pulse waveforms & flip-flop SER in 14nm tri-gate CMOS, thus enabling improved SER estimation & analysis for a range of supply voltages including NTV.

Original language	English (US)
Title of host publication	2017 Symposium on VLSI Technology, VLSI Technology 2017
Publisher	Institute of Electrical and Electronics Engineers Inc.
Pages	C114-C115
ISBN (Electronic)	9784863486058
DOIs	https://doi.org/10.23919/VLSIT.2017.7998134
State	Published - Jul 31 2017
Event	37th Symposium on VLSI Technology, VLSI Technology 2017 - Kyoto, Japan Duration: Jun 5 2017 → Jun 8 2017

Publication series

Name	Digest of Technical Papers - Symposium on VLSI Technology
ISSN (Print)	0743-1562

Other

Other	37th Symposium on VLSI Technology, VLSI Technology 2017
Country/Territory	Japan
City	Kyoto
Period	6/5/17 → 6/8/17

Bibliographical note

Funding Information:
change with supply voltage as well, as expected. The original SET pulse waveforms as well as the joint distributions of pulse amplitude & full width half max (FWHM) are reconstructed for different supply voltages from the pulse width measurements for a range of detection thresholds (buffer starving voltages) at each supply voltage (Fig. 6). Measured SEU/MBU cross-section versus supply voltage results for the flip-flops embedded in the BSC array scan chain, as shown in Fig. 6, confirm the inverse dependence of SER on supply voltage. These measured SET pulse distributions can be used in conjunction with the measured SEU/MBU cross-section results to calibrate and validate accuracies of predictive SER & QCrit models for different circuits across a range of voltages including NTV, thus paving the way for full chip level SER estimation and analysis. Acknowledgements The authors thank R. Corkran, C. Roberts and N. Seifert for their help. This research was, in part, funded by the U.S. government. The views and conclusions contained in this document are those of the authors and should not be interpreted as representing the official policies, either expressed or implied, of the U.S. government. References [1] N. Seifert, TNS, 2015 [2] S. Lee, IRPS, 2015 [3] T. D. Loveless, IEEE TNS, 2012 [4] J. Furuta, IRPS, 2011.

Publisher Copyright:
© 2017 JSAP.

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Kumar, S., Cho, M., Everson, L., Kim, H., Tang, Q., Mazanec, P., Meinerzhagen, P., Malavasi, A., Lake, D., Tokunaga, C., Quinn, H., Khellah, M., Tschanz, J., Borkar, S., De, V., & Kim, C. H. (2017). Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique. In 2017 Symposium on VLSI Technology, VLSI Technology 2017 (pp. C114-C115). Article 7998134 (Digest of Technical Papers - Symposium on VLSI Technology). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.23919/VLSIT.2017.7998134

Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique. / Kumar, Saurabh; Cho, Minki; Everson, Luke et al.
2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. p. C114-C115 7998134 (Digest of Technical Papers - Symposium on VLSI Technology).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Kumar, S, Cho, M, Everson, L, Kim, H, Tang, Q, Mazanec, P, Meinerzhagen, P, Malavasi, A, Lake, D, Tokunaga, C, Quinn, H, Khellah, M, Tschanz, J, Borkar, S, De, V & Kim, CH 2017, Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique. in 2017 Symposium on VLSI Technology, VLSI Technology 2017., 7998134, Digest of Technical Papers - Symposium on VLSI Technology, Institute of Electrical and Electronics Engineers Inc., pp. C114-C115, 37th Symposium on VLSI Technology, VLSI Technology 2017, Kyoto, Japan, 6/5/17. https://doi.org/10.23919/VLSIT.2017.7998134

Kumar S, Cho M, Everson L, Kim H, Tang Q, Mazanec P et al. Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique. In 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc. 2017. p. C114-C115. 7998134. (Digest of Technical Papers - Symposium on VLSI Technology). doi: 10.23919/VLSIT.2017.7998134

Kumar, Saurabh ; Cho, Minki ; Everson, Luke et al. / Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique. 2017 Symposium on VLSI Technology, VLSI Technology 2017. Institute of Electrical and Electronics Engineers Inc., 2017. pp. C114-C115 (Digest of Technical Papers - Symposium on VLSI Technology).

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Statistical characterization of radiation-induced pulse waveforms and flip-flop soft errors in 14nm tri-gate CMOS using a back-sampling chain (BSC) technique

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