Strain-Engineered MoTe2 Photodetector in Silicon Photonics at 1550 nm

R. Maiti, C. Patil, T. Xie, J. G. Azadani, R. Amin, M. Miscuglio, D. Van Thourhout, T. Low, S. Bank, V. J. Sorger

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Here we show how strain-engineering (∼4% tensile strain) lowers the bandgap (-0.2eV) of MoTe2 nanocrystals heterogeneously integrated around a silicon photonic waveguide, thus enabling photoabsorption at 1550nm, a responsivity of 0.5A/W and NEP of 90pW/Hz2.

Original languageEnglish (US)
Title of host publication2020 Conference on Lasers and Electro-Optics, CLEO 2020 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781943580767
StatePublished - May 2020
Event2020 Conference on Lasers and Electro-Optics, CLEO 2020 - San Jose, United States
Duration: May 10 2020May 15 2020

Publication series

NameConference Proceedings - Lasers and Electro-Optics Society Annual Meeting-LEOS
Volume2020-May
ISSN (Print)1092-8081

Conference

Conference2020 Conference on Lasers and Electro-Optics, CLEO 2020
Country/TerritoryUnited States
CitySan Jose
Period5/10/205/15/20

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