Strain induced giant magnetism in epitaxial Fe16N2 thin film

Nian Ji; Valeria Lauter; Xiaowei Zhang; Hailemariam Ambaye; Jian Ping Wang

doi:10.1063/1.4792706

Strain induced giant magnetism in epitaxial Fe₁₆N₂ thin film

Nian Ji, Valeria Lauter, Xiaowei Zhang, Hailemariam Ambaye, Jian Ping Wang

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

47 Scopus citations

Abstract

We report a direct observation of giant saturation magnetization in Fe ₁₆N₂. By exploiting thin film epitaxy, which provides controlled biaxial stress to create lattice distortion, we demonstrate that giant magnetism can be established in Fe₁₆N₂ thin film coherently grown on MgO (001) substrate. Explored by polarized neutron reflectometry, the depth-dependent saturation magnetic induction (Bs) of epitaxial Fe₁₆N₂ thin films is visualized, which reveals a strong correlation with the in-plane lattice parameter and tensile strain developed at near substrate interface. With controlled growth process and dimension adjustment, the Bs of these films can be modulated over a broad range, from ∼2.1 Tesla (T) (normal Bs) up to ∼3.1 T (giant Bs).

Original language	English (US)
Article number	072411
Journal	Applied Physics Letters
Volume	102
Issue number	7
DOIs	https://doi.org/10.1063/1.4792706
State	Published - Feb 18 2013

Bibliographical note

Funding Information:
The PNR work done at SNS, ORNL, and the work done at UMN were sponsored by U.S. Department of Energy, Office of Basic Energy Sciences under Grant No. DE-AC02-98CH10886. The authors would like to thank Professor J. Judy, Professor R. H. Victora, Professor C. Leighton, Professor P. Crowell, and Professor B. I. Shklovskii for helpful discussion.

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title = "Strain induced giant magnetism in epitaxial Fe16N2 thin film",

abstract = "We report a direct observation of giant saturation magnetization in Fe 16N2. By exploiting thin film epitaxy, which provides controlled biaxial stress to create lattice distortion, we demonstrate that giant magnetism can be established in Fe16N2 thin film coherently grown on MgO (001) substrate. Explored by polarized neutron reflectometry, the depth-dependent saturation magnetic induction (Bs) of epitaxial Fe16N2 thin films is visualized, which reveals a strong correlation with the in-plane lattice parameter and tensile strain developed at near substrate interface. With controlled growth process and dimension adjustment, the Bs of these films can be modulated over a broad range, from ∼2.1 Tesla (T) (normal Bs) up to ∼3.1 T (giant Bs).",

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AU - Zhang, Xiaowei

AU - Ambaye, Hailemariam

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N2 - We report a direct observation of giant saturation magnetization in Fe 16N2. By exploiting thin film epitaxy, which provides controlled biaxial stress to create lattice distortion, we demonstrate that giant magnetism can be established in Fe16N2 thin film coherently grown on MgO (001) substrate. Explored by polarized neutron reflectometry, the depth-dependent saturation magnetic induction (Bs) of epitaxial Fe16N2 thin films is visualized, which reveals a strong correlation with the in-plane lattice parameter and tensile strain developed at near substrate interface. With controlled growth process and dimension adjustment, the Bs of these films can be modulated over a broad range, from ∼2.1 Tesla (T) (normal Bs) up to ∼3.1 T (giant Bs).

AB - We report a direct observation of giant saturation magnetization in Fe 16N2. By exploiting thin film epitaxy, which provides controlled biaxial stress to create lattice distortion, we demonstrate that giant magnetism can be established in Fe16N2 thin film coherently grown on MgO (001) substrate. Explored by polarized neutron reflectometry, the depth-dependent saturation magnetic induction (Bs) of epitaxial Fe16N2 thin films is visualized, which reveals a strong correlation with the in-plane lattice parameter and tensile strain developed at near substrate interface. With controlled growth process and dimension adjustment, the Bs of these films can be modulated over a broad range, from ∼2.1 Tesla (T) (normal Bs) up to ∼3.1 T (giant Bs).

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