Abstract
Performance enhancements in strained Si NMOSFETs were demonstrated at Leff <70 nm. A 70% increase in electron mobility was observed at vertical fields as high as 1.5 MV/cm for the first time, suggesting a new mobility enhancement mechanism in addition to reduced phonon scattering. Current drive increase by ≥-35% was observed at Leff <70 nm. These results indicate that strain can be used to improve CMOS device performance at sub-100 nm technology nodes.
Original language | English (US) |
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Pages | 59-60 |
Number of pages | 2 |
State | Published - Jan 1 2001 |
Externally published | Yes |
Event | 2001 VLSI Technology Symposium - Kyoto, Japan Duration: Jun 12 2001 → Jun 14 2001 |
Other
Other | 2001 VLSI Technology Symposium |
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Country/Territory | Japan |
City | Kyoto |
Period | 6/12/01 → 6/14/01 |