Stress-Induced Performance Shifts in Flexible System-in-Foils Using Ultra-Thin Chips

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Silicon-based ultra-Thin chips (UTCs) are used to build flexible system-in-foils (SiFs) for bio-sensing and bio-monitoring, and utilize CMOS devices that deliver much higher performance than alternatives such as organic or thin-film transistors. Flexible SiFs experience significant mechanical stress in the field due to the deformation caused during daily use. These impact circuit performance, potentially causing a loss in functionality. This paper first models the stress due to two types of packages schemes for UTCs. Next, the stress is translated to shifts in mobility and threshold voltage of CMOS devices. Finally, the system-level performance variations of two common SiF elements, an A/D converter and an SRAM, are evaluated.

Original languageEnglish (US)
Title of host publicationProceedings of the 21st International Symposium on Quality Electronic Design, ISQED 2020
PublisherIEEE Computer Society
Pages237-242
Number of pages6
ISBN (Electronic)9781728142074
DOIs
StatePublished - Mar 2020
Event21st International Symposium on Quality Electronic Design, ISQED 2020 - Santa Clara, United States
Duration: Mar 25 2020Mar 26 2020

Publication series

NameProceedings - International Symposium on Quality Electronic Design, ISQED
Volume2020-March
ISSN (Print)1948-3287
ISSN (Electronic)1948-3295

Conference

Conference21st International Symposium on Quality Electronic Design, ISQED 2020
CountryUnited States
CitySanta Clara
Period3/25/203/26/20

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