TY - JOUR
T1 - Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields
AU - Shi, Q.
AU - Zudov, M. A.
AU - Morrison, C.
AU - Myronov, M.
N1 - Publisher Copyright:
© 2015 American Physical Society.
PY - 2015/5/8
Y1 - 2015/5/8
N2 - We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3×104. The anisotropy occurs in a wide range of filling factors where it is determined primarily by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.
AB - We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3×104. The anisotropy occurs in a wide range of filling factors where it is determined primarily by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.
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U2 - 10.1103/PhysRevB.91.201301
DO - 10.1103/PhysRevB.91.201301
M3 - Article
AN - SCOPUS:84929574203
SN - 1098-0121
VL - 91
JO - Physical Review B - Condensed Matter and Materials Physics
JF - Physical Review B - Condensed Matter and Materials Physics
IS - 20
M1 - 201301
ER -