Strong transport anisotropy in Ge/SiGe quantum wells in tilted magnetic fields

Q. Shi, M. A. Zudov, C. Morrison, M. Myronov

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7 Scopus citations

Abstract

We report on strong transport anisotropy in a two-dimensional hole gas in a Ge/SiGe quantum well, which emerges only when both perpendicular and in-plane magnetic fields are present. The ratio of resistances, measured along and perpendicular to the in-plane field, can exceed 3×104. The anisotropy occurs in a wide range of filling factors where it is determined primarily by the tilt angle. The lack of significant anisotropy without an in-plane field, easy tunability, and persistence to higher temperatures and filling factors set this anisotropy apart from nematic phases in GaAs/AlGaAs.

Original languageEnglish (US)
Article number201301
JournalPhysical Review B - Condensed Matter and Materials Physics
Volume91
Issue number20
DOIs
StatePublished - May 8 2015

Bibliographical note

Publisher Copyright:
© 2015 American Physical Society.

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