Strontium hafnate films deposited by physical vapor deposition

I. McCarthy; M. P. Agustin; S. Shamuilia; S. Stemmer; V. V. Afanas'ev; S. A. Campbell

doi:10.1016/j.tsf.2006.07.030

Strontium hafnate films deposited by physical vapor deposition

I. McCarthy, M. P. Agustin, S. Shamuilia, S. Stemmer, V. V. Afanas'ev, S. A. Campbell

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

22 Scopus citations

Abstract

Strontium hafnate films are predicted to have desirable properties for use as a high-permittivity gate insulator. Such a film is of extreme interest to the scaling of Metal Oxide Semiconductor (MOS) transistors. Thin films of strontium hafnate have been prepared by cosputtering of Hf and SrO₂. Strontium rich films appear to resist crystallization up to temperatures of 1000 °C, although high resolution electron microscopy suggests that nanocrystals form after high temperature annealing. Early measurements of MOS capacitors indicate a permittivity of approximately 35 and a lowest bandgap of about 4.4 eV.

Original language	English (US)
Pages (from-to)	2527-2530
Number of pages	4
Journal	Thin Solid Films
Volume	515
Issue number	4
DOIs	https://doi.org/10.1016/j.tsf.2006.07.030
State	Published - Dec 5 2006

Bibliographical note

Funding Information:
The authors wish to acknowledge the financial support of the Semiconductor Research Corporation and Sematech who sponsored this work through the Front End Processing Center. Part of the work was done at the Minnesota Nanofabrication Center and the Characterization Center, both of which receive partial support from NSF through the NNIN program.

Keywords

Insulators
Metal-oxide Semiconductor Structure (MOS)

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abstract = "Strontium hafnate films are predicted to have desirable properties for use as a high-permittivity gate insulator. Such a film is of extreme interest to the scaling of Metal Oxide Semiconductor (MOS) transistors. Thin films of strontium hafnate have been prepared by cosputtering of Hf and SrO2. Strontium rich films appear to resist crystallization up to temperatures of 1000 °C, although high resolution electron microscopy suggests that nanocrystals form after high temperature annealing. Early measurements of MOS capacitors indicate a permittivity of approximately 35 and a lowest bandgap of about 4.4 eV.",

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AU - Shamuilia, S.

AU - Stemmer, S.

AU - Afanas'ev, V. V.

AU - Campbell, S. A.

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Strontium hafnate films deposited by physical vapor deposition

Abstract

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Keywords

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