Structure-property relationships and mobility optimization in sputtered La-doped BaSn O3 films: Toward 100 c m2 V-1 s-1 mobility

Engineering & Materials Science

• Defect density 93%
• Substrates 69%
• Annealing 64%
• Thin films 61%
• Lattice mismatch 58%
• Sputter deposition 53%
• Temperature 52%
• Molecular beam epitaxy 50%
• Pulsed laser deposition 50%
• Buffer layers 46%
• Carrier concentration 46%
• Throughput 45%
• Perovskite 44%
• Heterojunctions 42%
• Deposition rates 41%
• Energy gap 37%
• Diffraction 35%
• Transmission electron microscopy 33%
• Power electronics 31%
• X rays 29%
• Vacuum 28%
• Oxides 28%
• Oxygen 26%
• Scanning electron microscopy 25%
• Microstructure 21%
• Industry 14%

Physics & Astronomy

• optimization 86%
• synthesis 37%
• high pressure oxygen 36%
• annealing 31%
• room temperature 29%
• defects 29%
• electronics 27%
• electron mobility 26%
• thin films 26%
• pulsed laser deposition 24%
• high current 23%
• x ray diffraction 22%
• molecular beam epitaxy 22%
• buffers 22%
• industries 21%
• perovskites 21%
• atomic force microscopy 19%
• trends 19%
• broadband 18%
• transmission electron microscopy 17%
• scanning electron microscopy 17%
• vacuum 16%
• oxides 16%
• high resolution 15%
• temperature 15%
• microstructure 15%
• curves 14%

Chemical Compounds

• Compound Mobility 100%
• Liquid Film 63%
• Annealing 41%
• Molecular Beam Epitaxy 37%
• Sputter Deposition 37%
• Pulsed Laser Deposition 34%
• Electron Mobility 31%
• Scanning Transmission Electron Microscopy 29%
• Ambient Reaction Temperature 29%
• Electron Density 23%
• Atomic Force Microscopy 20%
• Band Gap 19%
• Microstructure 17%
• Buffer Solution 16%
• Oxide 14%
• Application 8%