Study of charge and inversion layer mobility in hafnium oxide stacks

Zhihong Zhang; Min Li; Stephen A. Campbell

doi:10.1149/1.2209305

Study of charge and inversion layer mobility in hafnium oxide stacks

Zhihong Zhang, Min Li, Stephen A. Campbell

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Charge in HfO₂ gate stacks grown from various MOCVD sources has been studied. For these films, charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO₂/ interfacial layer (IL) interface and positive at the Si/IL interface. A forming gas anneal (FGA) can reduce interface charge, hysteresis, and interface state densities. The marked difference in the post deposition annealing (PDA) response of similar films deposited from different precursors, however, strongly suggests that charge in these stacks is related to the deposition chemistry and may be due to residual impurities or defects left in the film from the deposition. The study on the inversion layer mobility indicates that coulomb scattering due to interface trapped charge accounts mainly for the hole mobility degradation. Electron mobility experiences much more severe degradation than hole mobility, suggesting the existence of multiple scattering sources. copyright The Electrochemical Society.

Original language	English (US)
Title of host publication	ECS Transactions
Pages	565-576
Number of pages	12
Volume	1
Edition	5
DOIs	https://doi.org/10.1149/1.2209305
State	Published - 2005
Event	3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States Duration: Oct 16 2005 → Oct 21 2005

Other

Other	3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country	United States
City	Los Angeles, CA
Period	10/16/05 → 10/21/05

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title = "Study of charge and inversion layer mobility in hafnium oxide stacks",

abstract = "Charge in HfO2 gate stacks grown from various MOCVD sources has been studied. For these films, charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO2/ interfacial layer (IL) interface and positive at the Si/IL interface. A forming gas anneal (FGA) can reduce interface charge, hysteresis, and interface state densities. The marked difference in the post deposition annealing (PDA) response of similar films deposited from different precursors, however, strongly suggests that charge in these stacks is related to the deposition chemistry and may be due to residual impurities or defects left in the film from the deposition. The study on the inversion layer mobility indicates that coulomb scattering due to interface trapped charge accounts mainly for the hole mobility degradation. Electron mobility experiences much more severe degradation than hole mobility, suggesting the existence of multiple scattering sources. copyright The Electrochemical Society.",

author = "Zhihong Zhang and Min Li and Campbell, {Stephen A.}",

year = "2005",

doi = "10.1149/1.2209305",

language = "English (US)",

volume = "1",

pages = "565--576",

booktitle = "ECS Transactions",

edition = "5",

note = "3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society ; Conference date: 16-10-2005 Through 21-10-2005",

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TY - GEN

T1 - Study of charge and inversion layer mobility in hafnium oxide stacks

AU - Zhang, Zhihong

AU - Li, Min

AU - Campbell, Stephen A.

PY - 2005

Y1 - 2005

N2 - Charge in HfO2 gate stacks grown from various MOCVD sources has been studied. For these films, charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO2/ interfacial layer (IL) interface and positive at the Si/IL interface. A forming gas anneal (FGA) can reduce interface charge, hysteresis, and interface state densities. The marked difference in the post deposition annealing (PDA) response of similar films deposited from different precursors, however, strongly suggests that charge in these stacks is related to the deposition chemistry and may be due to residual impurities or defects left in the film from the deposition. The study on the inversion layer mobility indicates that coulomb scattering due to interface trapped charge accounts mainly for the hole mobility degradation. Electron mobility experiences much more severe degradation than hole mobility, suggesting the existence of multiple scattering sources. copyright The Electrochemical Society.

AB - Charge in HfO2 gate stacks grown from various MOCVD sources has been studied. For these films, charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO2/ interfacial layer (IL) interface and positive at the Si/IL interface. A forming gas anneal (FGA) can reduce interface charge, hysteresis, and interface state densities. The marked difference in the post deposition annealing (PDA) response of similar films deposited from different precursors, however, strongly suggests that charge in these stacks is related to the deposition chemistry and may be due to residual impurities or defects left in the film from the deposition. The study on the inversion layer mobility indicates that coulomb scattering due to interface trapped charge accounts mainly for the hole mobility degradation. Electron mobility experiences much more severe degradation than hole mobility, suggesting the existence of multiple scattering sources. copyright The Electrochemical Society.

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