Study of charge and inversion layer mobility in hafnium oxide stacks

Zhihong Zhang, Min Li, Stephen A. Campbell

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Charge in HfO2 gate stacks grown from various MOCVD sources has been studied. For these films, charge in the stack is mainly concentrated at the interfaces between the layers and is negative at the HfO2/ interfacial layer (IL) interface and positive at the Si/IL interface. A forming gas anneal (FGA) can reduce interface charge, hysteresis, and interface state densities. The marked difference in the post deposition annealing (PDA) response of similar films deposited from different precursors, however, strongly suggests that charge in these stacks is related to the deposition chemistry and may be due to residual impurities or defects left in the film from the deposition. The study on the inversion layer mobility indicates that coulomb scattering due to interface trapped charge accounts mainly for the hole mobility degradation. Electron mobility experiences much more severe degradation than hole mobility, suggesting the existence of multiple scattering sources. copyright The Electrochemical Society.

Original languageEnglish (US)
Title of host publicationPhysics and Technology of High-k Gate Dielectrics III
PublisherElectrochemical Society Inc.
Pages565-576
Number of pages12
Edition5
ISBN (Electronic)9781607685395
DOIs
StatePublished - 2006
Event3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society - Los Angeles, CA, United States
Duration: Oct 16 2005Oct 21 2005

Publication series

NameECS Transactions
Number5
Volume1
ISSN (Print)1938-5862
ISSN (Electronic)1938-6737

Other

Other3rd International Symposium on High Dielectric Constant Gate Stacks - 208th Meeting of the Electrochemical Society
Country/TerritoryUnited States
CityLos Angeles, CA
Period10/16/0510/21/05

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