Abstract
Tunneling junctions with Pb electrodes have been fabricated with artificial barriers of Er(OH)//3 and Ho(OH)//3 which are an antiferromagnet and a ferromagnet respectively. Conductance vs. voltage characteristics suggest the presence of spin-disorder scattering from the barrier, and in the case of a ferromagnetic barrier, spin-dependent inelastic tunneling.
| Original language | English (US) |
|---|---|
| Title of host publication | Unknown Host Publication Title |
| Publisher | North-Holland |
| Pages | 829-830 |
| Number of pages | 2 |
| Edition | pt 2 |
| ISBN (Print) | 0444869107 |
| State | Published - Dec 1 1984 |
Publication series
| Name | |
|---|---|
| Number | pt 2 |