Films of the heavy fermion compound UBe13 have been prepared by dc sputtering from a compound target. The transition temperatures of 3000 Å thick films deposited onto single-crystal sapphire substrates approach those of bulk material. Temperature dependences of the parallel and perpendicualar critical fileds of UBe13 were determined resistively. The ratio Hc11/Hc⊥ was found to be 1.25, a value which suggests the partial rather than complete of the films. This result implies that the pairing configuration in UBe13, at least near the surface, cannot be pure triplet, or any other pure state with L≠0.