Abstract
The symmetry of the recombining electrons and holes in lightly photo-excited InGaN LEDs revealed through ODMR is related to the physical structure, band structure and defects present. Calculations of the electron-g within the k·p formalism give the average shift from the free-electron value for GaN but are not fully reconciled with the anisotropy. This theory is also extended to InGaN alloys for both pseudomorphic and relaxed layers. The average shift is close to the experimental values for the green LED. The strongly reduced hole anisotropies seen experimentally are explained by a recently published theory for acceptors in GaN.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 6d |
| Journal | MRS Internet Journal of Nitride Semiconductor Research |
| Volume | 4 |
| Issue number | SUPPL. 1 |
| DOIs | |
| State | Published - 1999 |