Synthesis of Cu2ZnSnS4 (CZTS) absorber by rapid thermal processing (RTP) sulfurization of stacked metallic precursor films for solar cell applications

S. M. Pawar, A. I. Inamdar, B. S. Pawar, K. V. Gurav, S. W. Shin, Xiao Yanjun, S. S. Kolekar, Jung Ho Lee, Jin Hyeok Kim, Hyunsik Im

Research output: Contribution to journalArticlepeer-review

56 Scopus citations

Abstract

Cu2ZnSnS4 (CZTS) absorbers have been grown on Mo-coated glass substrates by the rapid thermal processing (RTP) sulfurization of stacked metallic precursor (CZT) films at different annealing temperatures ranging from 500 to 580 C for 5 min in sulfur atmosphere. The effects of sulfurization temperature on the structural, morphological, chemical, and optical properties of the CZTS absorbers have been investigated. XRD and Raman studies reveal that the as-deposited stacked metallic precursor films consist of metal elements such as Zn, Sn and binary alloys such as Cu6Sn 5, Cu3Sn and CuZn. The sulfurized CZTS absorber films have single phase polycrystalline kesterite crystal structure with dense morphology. At 580 C, the CZT metallic precursor film is fully sulfurized with Zn-rich and Sn-poor composition, and its bandgap energy is found to be 1.50 eV. The solar cell fabricated with the CZTS absorber grown at an optimized sulfurization temperature of 580 C shows a conversion efficiency of ~5% for a 0.44 cm 2 area with Voc=561 mV, Jsc=18.4 mA/cm 2, and FF=48.2.

Original languageEnglish (US)
Pages (from-to)76-79
Number of pages4
JournalMaterials Letters
Volume118
DOIs
StatePublished - Mar 1 2014

Keywords

  • CuZnSnS absorber
  • RF sputtering method
  • RTP sulfurization
  • Thin film solar cell

Fingerprint

Dive into the research topics of 'Synthesis of Cu<sub>2</sub>ZnSnS<sub>4</sub> (CZTS) absorber by rapid thermal processing (RTP) sulfurization of stacked metallic precursor films for solar cell applications'. Together they form a unique fingerprint.

Cite this