A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.
Bibliographical noteFunding Information:
This work was supported primarily by the M rsec Program of the National Science Foundation under Award Number DMR-0212302. The work at Georgia Tech was also partly supported via NSF grants CHE-0342321 and CHE-0443564. M.W.B thanks Prof. D.A. Freedman for his assistance with spectroelectrochemistry and Prof. T. M. Pappenfus for helpful discussions. The authors acknowledge the X-ray Crystallographic Laboratory in the University of Minnesota Department of Chemistry.
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