Synthesis, X-ray, spectroelectrochemical, and theoretical studies of a tricyanovinyl-capped quaterthiophene: A correlation of semiconductor performance with physical properties

Michael W. Burand, Kari A. McGee, Xiuyu Cai, Demetrio A. da Silva Filho, Jean Luc Brédas, C. Daniel Frisbie, Kent R. Mann

Research output: Contribution to journalArticlepeer-review

5 Scopus citations

Abstract

A new tricyanovinyl-substituted quaterthiophene compound has been synthesized and characterized by X-ray crystallography, cyclic voltammetry, spectroelectrochemistry, and theoretical analysis. The tricyanovinyl group provides a dramatic change in the physical properties of the quaterthiophene. The molecule has been tested as the semiconducting layer in an n-type thin-film transistor. The device properties correlate well with the solid-state packing, spectroelectrochemical results, and theoretical modeling.

Original languageEnglish (US)
Pages (from-to)251-256
Number of pages6
JournalChemical Physics Letters
Volume425
Issue number4-6
DOIs
StatePublished - Jul 10 2006

Bibliographical note

Funding Information:
This work was supported primarily by the M rsec Program of the National Science Foundation under Award Number DMR-0212302. The work at Georgia Tech was also partly supported via NSF grants CHE-0342321 and CHE-0443564. M.W.B thanks Prof. D.A. Freedman for his assistance with spectroelectrochemistry and Prof. T. M. Pappenfus for helpful discussions. The authors acknowledge the X-ray Crystallographic Laboratory in the University of Minnesota Department of Chemistry.

Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.

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