Time traces of conductance fluctuations in the co-planar current of hydrogenated amorphous silicon (a-Si:H) display sharp jumps between discrete resistance levels, termed random telegraph switching noise (RTSN). Measurements of the temperature dependence and effects of light soaking of the RTSN in n-type doped a-Si:H are reported. The rise times between the two level fluctuators yield activation energies and attempt to hop frequencies for microscopic hydrogen motion which agree with those obtained from NMR experiments. Computer simulations of a dynamical percolation random resistor network support the suggestion that the RTSN arises from local diffusion processes altering the conductance of inhomogeneous current filaments.
|Original language||English (US)|
|Number of pages||6|
|Journal||Materials Research Society Symposium - Proceedings|
|State||Published - Jan 1 1995|
|Event||Proceedings of the 1995 MRS Spring Meeting - San Francisco, CA, USA|
Duration: Apr 17 1995 → Apr 21 1995