Temperature dependence of electronic and lattice properties of doping superlattices in IV-VI semiconductors

P. P. Ruden, T. L. Reinecke, F. Crowne

Research output: Contribution to journalArticlepeer-review

3 Scopus citations

Abstract

The effective band gap and the thermally excited carrier concentrations of doping superlattices in PbTe are calculated self-consistently using a semiclassical description. They show interesting temperature behaviors which arise from the temperature dependences of the lattice polarizability, of the bulk band gap, and of the equilibrium carrier concentration. The configurations of lattice polarization which are possible for doping superlattices in PbTe and in Pb1-xGexTe alloys are discussed based on a Landau free energy approach.

Original languageEnglish (US)
Pages (from-to)197-200
Number of pages4
JournalSuperlattices and Microstructures
Volume1
Issue number3
DOIs
StatePublished - 1985

Bibliographical note

Funding Information:
Acknowledgement - This work was supported tially by an ONR contract.

Fingerprint

Dive into the research topics of 'Temperature dependence of electronic and lattice properties of doping superlattices in IV-VI semiconductors'. Together they form a unique fingerprint.

Cite this