Temperature dependence of electronic and lattice properties of doping superlattices in IV-VI semiconductors

P. P. Ruden; T. L. Reinecke; F. Crowne

doi:10.1016/0749-6036(85)90002-3

Temperature dependence of electronic and lattice properties of doping superlattices in IV-VI semiconductors

P. P. Ruden, T. L. Reinecke, F. Crowne

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Abstract

The effective band gap and the thermally excited carrier concentrations of doping superlattices in PbTe are calculated self-consistently using a semiclassical description. They show interesting temperature behaviors which arise from the temperature dependences of the lattice polarizability, of the bulk band gap, and of the equilibrium carrier concentration. The configurations of lattice polarization which are possible for doping superlattices in PbTe and in Pb_1-xGe_xTe alloys are discussed based on a Landau free energy approach.

Original language	English (US)
Pages (from-to)	197-200
Number of pages	4
Journal	Superlattices and Microstructures
Volume	1
Issue number	3
DOIs	https://doi.org/10.1016/0749-6036(85)90002-3
State	Published - 1985
Externally published	Yes

Bibliographical note

Funding Information:
Acknowledgement - This work was supported tially by an ONR contract.

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abstract = "The effective band gap and the thermally excited carrier concentrations of doping superlattices in PbTe are calculated self-consistently using a semiclassical description. They show interesting temperature behaviors which arise from the temperature dependences of the lattice polarizability, of the bulk band gap, and of the equilibrium carrier concentration. The configurations of lattice polarization which are possible for doping superlattices in PbTe and in Pb1-xGexTe alloys are discussed based on a Landau free energy approach.",

author = "Ruden, {P. P.} and Reinecke, {T. L.} and F. Crowne",

note = "Funding Information: Acknowledgement - This work was supported tially by an ONR contract.",

year = "1985",

doi = "10.1016/0749-6036(85)90002-3",

language = "English (US)",

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pages = "197--200",

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T1 - Temperature dependence of electronic and lattice properties of doping superlattices in IV-VI semiconductors

AU - Ruden, P. P.

AU - Reinecke, T. L.

AU - Crowne, F.

N1 - Funding Information: Acknowledgement - This work was supported tially by an ONR contract.

PY - 1985

Y1 - 1985

N2 - The effective band gap and the thermally excited carrier concentrations of doping superlattices in PbTe are calculated self-consistently using a semiclassical description. They show interesting temperature behaviors which arise from the temperature dependences of the lattice polarizability, of the bulk band gap, and of the equilibrium carrier concentration. The configurations of lattice polarization which are possible for doping superlattices in PbTe and in Pb1-xGexTe alloys are discussed based on a Landau free energy approach.

AB - The effective band gap and the thermally excited carrier concentrations of doping superlattices in PbTe are calculated self-consistently using a semiclassical description. They show interesting temperature behaviors which arise from the temperature dependences of the lattice polarizability, of the bulk band gap, and of the equilibrium carrier concentration. The configurations of lattice polarization which are possible for doping superlattices in PbTe and in Pb1-xGexTe alloys are discussed based on a Landau free energy approach.

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JO - Superlattices and Microstructures

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Temperature dependence of electronic and lattice properties of doping superlattices in IV-VI semiconductors

Abstract

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