Temperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated Ge

Steven J. Koester; Martin M. Frank; David M. Isaacson; Huiling Shang

Temperature-dependent admittance analysis of HfO₂ gate dielectrics on nitrogen- and sulfur-passivated Ge

Steven J. Koester, Martin M. Frank, David M. Isaacson, Huiling Shang

Electrical and Computer Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Original language	English (US)
Title of host publication	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
State	Published - 2006
Event	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States Duration: May 15 2006 → May 17 2006

Publication series

Name	Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume	2006

Other

Other	Third International SiGe Technology and Device Meeting, ISTDM 2006
Country/Territory	United States
City	Princeton, NJ
Period	5/15/06 → 5/17/06

OpenUrl availability

Full text

Cite this

Koester, S. J., Frank, M. M., Isaacson, D. M., & Shang, H. (2006). Temperature-dependent admittance analysis of HfO₂ gate dielectrics on nitrogen- and sulfur-passivated Ge. In Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest Article 1715956 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Temperature-dependent admittance analysis of HfO₂ gate dielectrics on nitrogen- and sulfur-passivated Ge. / Koester, Steven J.; Frank, Martin M.; Isaacson, David M. et al.
Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest. 2006. 1715956 (Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest; Vol. 2006).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Koester, SJ, Frank, MM, Isaacson, DM & Shang, H 2006, Temperature-dependent admittance analysis of HfO₂ gate dielectrics on nitrogen- and sulfur-passivated Ge. in Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest., 1715956, Third International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest, vol. 2006, Third International SiGe Technology and Device Meeting, ISTDM 2006, Princeton, NJ, United States, 5/15/06.

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