Temperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated Ge

Steven J. Koester, Martin M. Frank, David M. Isaacson, Huiling Shang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations
Original languageEnglish (US)
Title of host publicationThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
StatePublished - Dec 1 2006
EventThird International SiGe Technology and Device Meeting, ISTDM 2006 - Princeton, NJ, United States
Duration: May 15 2006May 17 2006

Publication series

NameThird International SiGe Technology and Device Meeting, ISTDM 2006 - Conference Digest
Volume2006

Other

OtherThird International SiGe Technology and Device Meeting, ISTDM 2006
Country/TerritoryUnited States
CityPrinceton, NJ
Period5/15/065/17/06

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