Temperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated Ge

Steven J. Koester, Martin M. Frank, David M. Isaacson, Huiling Shang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Scopus citations

Fingerprint

Dive into the research topics of 'Temperature-dependent admittance analysis of HfO2 gate dielectrics on nitrogen- and sulfur-passivated Ge'. Together they form a unique fingerprint.