Temperature dependent fracture initiation in microscale silicon

Eric D. Hintsala; Sanjit Bhowmick; Xie Yueyue; Roberto Ballarini; S. A Syed Asif; William W. Gerberich

doi:10.1016/j.scriptamat.2016.11.016

Temperature dependent fracture initiation in microscale silicon

Eric D. Hintsala, Sanjit Bhowmick, Xie Yueyue, Roberto Ballarini, S. A Syed Asif, William W. Gerberich

Research output: Contribution to journal › Article › peer-review

29 Scopus citations

Abstract

We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity.

Original language	English (US)
Pages (from-to)	78-82
Number of pages	5
Journal	Scripta Materialia
Volume	130
DOIs	https://doi.org/10.1016/j.scriptamat.2016.11.016
State	Published - Mar 15 2017

Bibliographical note

Funding Information:
The authors would like to thank Ariel Leonard for her assistance with the high temperature fracture testing and Dr. Douglas D. Stauffer for his advice from Hysitron, Inc. Partial support came from the NSF MRSEC Program at the University of Minnesota, Award DMR-1420013 . Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program.

Publisher Copyright:
© 2016 Acta Materialia Inc.

Keywords

Brittle-to-ductile transition
Electron microscopy
Fracture
Nanomechanical testing
Silicon

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title = "Temperature dependent fracture initiation in microscale silicon",

abstract = "We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity.",

keywords = "Brittle-to-ductile transition, Electron microscopy, Fracture, Nanomechanical testing, Silicon",

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note = "Funding Information: The authors would like to thank Ariel Leonard for her assistance with the high temperature fracture testing and Dr. Douglas D. Stauffer for his advice from Hysitron, Inc. Partial support came from the NSF MRSEC Program at the University of Minnesota, Award DMR-1420013 . Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Publisher Copyright: {\textcopyright} 2016 Acta Materialia Inc.",

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AU - Hintsala, Eric D.

AU - Bhowmick, Sanjit

AU - Yueyue, Xie

AU - Ballarini, Roberto

AU - Asif, S. A Syed

AU - Gerberich, William W.

N1 - Funding Information: The authors would like to thank Ariel Leonard for her assistance with the high temperature fracture testing and Dr. Douglas D. Stauffer for his advice from Hysitron, Inc. Partial support came from the NSF MRSEC Program at the University of Minnesota, Award DMR-1420013 . Parts of this work were carried out in the Characterization Facility, University of Minnesota, which receives partial support from NSF through the MRSEC program. Publisher Copyright: © 2016 Acta Materialia Inc.

PY - 2017/3/15

Y1 - 2017/3/15

N2 - We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity.

AB - We present novel in-situ scanning electron microscope experiments exploring the fracture of silicon as a function of temperature at the microscale, from room temperature to 600 °C. Clear post mortem TEM observations of dislocation activity at and above 450 °C suggest that back stresses from crack-tip dislocation emission raise the applied stress intensity at initiation, as part of a brittle to ductile transition starting at 300 °C. This is in agreement with other microscale measurements; however, these experiments are particularly noteworthy in their ability to directly observe crack advance and perform post-mortem analysis to investigate dislocation activity.

KW - Brittle-to-ductile transition

KW - Electron microscopy

KW - Fracture

KW - Nanomechanical testing

KW - Silicon

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Temperature dependent fracture initiation in microscale silicon

Abstract

Bibliographical note

Keywords

How much support was provided by MRSEC?

Reporting period for MRSEC

Access

OpenUrl availability

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University of Minnesota MRSEC (DMR-1420013)

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