The production and electrical characterization of free-standing cubic single-crystal Si nanoparticles

S. A. Campbell; U. Kortshagen; A. Bapat; Y. Dong; S. Hilchie; Z. Shen

doi:10.1007/s11837-004-0284-2

The production and electrical characterization of free-standing cubic single-crystal Si nanoparticles

S. A. Campbell, U. Kortshagen, A. Bapat, Y. Dong, S. Hilchie, Z. Shen

Research output: Contribution to journal › Article › peer-review

6 Scopus citations

Abstract

This paper reviews processes to synthesize single-crystal silicon nanoparticles in an aerosol, then deposit the particles on the wafer to characterize the materials and build devices. By using plasma for particle formation, particle charge can be used to prevent particle agglomeration. This low-temperature process for constructing electronic devices never exposes the substrate to the very high temperature needed to form the single crystals.

Original language	English (US)
Pages (from-to)	26-28
Number of pages	3
Journal	JOM
Volume	56
Issue number	10
DOIs	https://doi.org/10.1007/s11837-004-0284-2
State	Published - Oct 2004

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Funding Information:
The authors acknowledge the support of the National Science Foundation through its awards DMI-0304211 and CTS-9876224.

Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.

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@article{e3e704b5f142449f82fc64b3fdc46709,

title = "The production and electrical characterization of free-standing cubic single-crystal Si nanoparticles",

abstract = "This paper reviews processes to synthesize single-crystal silicon nanoparticles in an aerosol, then deposit the particles on the wafer to characterize the materials and build devices. By using plasma for particle formation, particle charge can be used to prevent particle agglomeration. This low-temperature process for constructing electronic devices never exposes the substrate to the very high temperature needed to form the single crystals.",

author = "Campbell, {S. A.} and U. Kortshagen and A. Bapat and Y. Dong and S. Hilchie and Z. Shen",

note = "Funding Information: The authors acknowledge the support of the National Science Foundation through its awards DMI-0304211 and CTS-9876224. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.",

year = "2004",

month = oct,

doi = "10.1007/s11837-004-0284-2",

language = "English (US)",

volume = "56",

pages = "26--28",

journal = "JOM",

issn = "1047-4838",

publisher = "Minerals, Metals and Materials Society",

number = "10",

}

TY - JOUR

T1 - The production and electrical characterization of free-standing cubic single-crystal Si nanoparticles

AU - Campbell, S. A.

AU - Kortshagen, U.

AU - Bapat, A.

AU - Dong, Y.

AU - Hilchie, S.

AU - Shen, Z.

N1 - Funding Information: The authors acknowledge the support of the National Science Foundation through its awards DMI-0304211 and CTS-9876224. Copyright: Copyright 2018 Elsevier B.V., All rights reserved.

PY - 2004/10

Y1 - 2004/10

N2 - This paper reviews processes to synthesize single-crystal silicon nanoparticles in an aerosol, then deposit the particles on the wafer to characterize the materials and build devices. By using plasma for particle formation, particle charge can be used to prevent particle agglomeration. This low-temperature process for constructing electronic devices never exposes the substrate to the very high temperature needed to form the single crystals.

AB - This paper reviews processes to synthesize single-crystal silicon nanoparticles in an aerosol, then deposit the particles on the wafer to characterize the materials and build devices. By using plasma for particle formation, particle charge can be used to prevent particle agglomeration. This low-temperature process for constructing electronic devices never exposes the substrate to the very high temperature needed to form the single crystals.

UR - http://www.scopus.com/inward/record.url?scp=9344255535&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=9344255535&partnerID=8YFLogxK

U2 - 10.1007/s11837-004-0284-2

DO - 10.1007/s11837-004-0284-2

M3 - Article

AN - SCOPUS:9344255535

SN - 1047-4838

VL - 56

SP - 26

EP - 28

JO - JOM

JF - JOM

IS - 10

ER -

The production and electrical characterization of free-standing cubic single-crystal Si nanoparticles

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